Presentation Information
[16p-PA3-8]Multi-evaluation of AlN nanopillars using X-ray Diffraction Method
〇Taiji Yamamoto1, Weng Zhewei1, Takumu Saito2, Seiya Kato2, Sho Iwayama2, Motoaki Iwaya2 (1.Rigaku Corp., 2.Meijo Univ.)
Keywords:
nitride semiconductor,XRD,crystal growth
Ultraviolet lasers require operation at high currents and high powers, making vertical device structures advantageous. To achieve this structure, a delamination technique using pressurized hot water on nano-pillar-patterned AlN layers has been reported. The formation state of the AlN nano-pillars significantly affects the delamination characteristics and the crystallinity of the overlying AlGaN layer. This presentation reports on the results of the AlN nano-pillar layer evaluated using multiple analytical techniques based on X-ray diffraction method.