Presentation Information
[16p-PA4-3]Evaluation of the Surface morphology of SiGeC Thin Films Deposited on Slightly Inclined Si(110) Wafers
〇(M1)Yuta Fujimoto1, Naoyuki Wada2, Akihiro Suzuki2, Kazuhito Matsukawa2, Koji Mastumoto2, Hiroaki Yamamoto2, Junji Yamanaka1, Keisuke Arimoto1 (1.Yamanashi Univ., 2.SUMCO Corp.)
Keywords:
SiGeC,Si(110)
To improve the performance of nanosheet transistors, enhancing the hole mobility is essential. An increase in hole mobility has been reported by utilizing (110) planes as the channel. During the formation process of nanosheet transistors, a Si/SiGe multilayer structure is created. Forming a SiGe thin film with high uniformity and flatness on a Si(110) substrate is difficult. However, it has been found that the surface flatness of SiGe deposited on an inclined Si substrate improves. In this study, aiming for further flatness improvement, SiGeC was deposited on a inclined Si(110) wafer, and the effect on surface morphology improvement was investigated.