Session Details
[16p-PA4-1~10]15.5 Group IV crystals and alloys
Mon. Mar 16, 2026 2:30 PM - 4:00 PM JST
Mon. Mar 16, 2026 5:30 AM - 7:00 AM UTC
Mon. Mar 16, 2026 5:30 AM - 7:00 AM UTC
PA4 (Arena (1F))
[16p-PA4-1]Searching for stable structures of SiSn by genetic algorithm and DFT calculation
〇(D)Hibiki Bekku1, Koji Sueoka2, Yusuke Noda3,4 (1.Grad. Sch. Comput. Sci. Syst. Eng., Okayama Pref. Univ., 2.Fac. Comput. Sci. Syst. Eng., Okayama Pref. Univ., 3.Kyushu Inst. Technol., 4.DS and AI Research Center, Kyushu Inst. Technol.)
[16p-PA4-2]Searching for stable structures of SiGeSn ternary alloy by first-principles calculations
〇Takahito Matsuzoe1, Yusuke Noda1,2, Hibiki Bekku3, Koji Sueoka4 (1.Grad. Sch. CSSE, Kyushu Inst. Tech., 2.DS-AI Res. Ctr., Kyushu Inst. Tech., 3.Grad. Sch. CSSE, Okayama Pref. Univ., 4.Fac. CSSE, Okayama Pref. Univ.)
[16p-PA4-3]Evaluation of the Surface morphology of SiGeC Thin Films Deposited on Slightly Inclined Si(110) Wafers
〇(M1)Yuta Fujimoto1, Naoyuki Wada2, Akihiro Suzuki2, Kazuhito Matsukawa2, Koji Mastumoto2, Hiroaki Yamamoto2, Junji Yamanaka1, Keisuke Arimoto1 (1.Yamanashi Univ., 2.SUMCO Corp.)
[16p-PA4-4]The Effect of Substrate Temperature on Orientation and Density of Ge Wires
Grown on Quartz Substrate by PECVD.
〇Mihaeru Uematsu1, Shin-ichi Kobayashi1 (1.Tokyo Polytechnic Univ.)
[16p-PA4-5]Temperature dependence of Ge nanowire formation by MOCVD
Kensho Ohishi1, Kentarou Sawano1, 〇Michihiro Yamada1 (1.Tokyo City Univ.)
[16p-PA4-6]Fabrication and characterizations of strained SiGe channel structures grown on GOI(111)
〇Yao Guo1, Kentarou Sawano1 (1.Tokyo City Univ.)
[16p-PA4-7]Suppression of crack generation and propagation on thick Ge-on-Si (111) by mesa patterning
〇(P)Mohammad Mahfuz Alam1, Yuka Shibahara1, Michihiro Yamada1, Kohei Hamaya2,3,4, Kentarou Sawano1 (1.Advanced Research Laboratories, Tokyo City University, 2.The Univ. of Osaka. Grad. Sch. Eng. Sci., 3.CSRN, The Univ. of Osaka, 4.OTRI, The Univ. of Osaka)
[16p-PA4-8]The Development of SiGe/Ge Multiple Quantum Well Laser Diodes
〇ZHENGKUN CAI1, Mayu Aikawa1, Kentaro Sawano1 (1.Tokyo City Univ.)
[16p-PA4-9]Evaluation of strain distribution in strained SiGe/Ge-on-Si(111)
〇Keitaro Kato1, Ryota Mizoguchi1, Yuki Nagao1, Tomohiro Hagiwara1, Shugo Ishibashi1, Mayu Aikawa1, Mithihiro Yamada1, Kohei Hamaya2,3, Kentarou Sawano1 (1.Tokyo City Univ., 2.CSRN, The Univ. of Osaka., 3.OTRI-Spin, The Univ. of Osaka.)
[16p-PA4-10]Ge Crystallization in the Growth of GeS Thin Films Using an Al Catalyst
〇Qinqiang Zhang1, Ryo Matsumura1, Naoki Fukata1,2 (1.NIMS, 2.Univ. of Tsukuba)