Presentation Information
[16p-PA7-10]CVD Growth of Multilayer h-BN on Ferroelectric Substrate
〇Takuto Inaba1, Shinichiro Mouri1, Kuddus Abdul2 (1.Ritsumeikan Univ., 2.R-GIRO)
Keywords:
h-BN,Ferroelectric
Toward ferroelectric device applications of atomically thin materials, we attempted the direct growth of h-BN, which serves as a spacer layer, on a ferroelectric substrate. Nickel, acting as a catalyst, was deposited on a ferroelectric lithium niobate (LiNbO3,LN) substrate, and h-BN was grown at 1000℃ using ammonia borane as the precursor. Raman spectroscopy confirmed that h-BN was formed over the entire substrate surface. However, it was also found that niobium oxide formed on the substrate surface due to reactions with hydrogen generated during precursor decomposition, leading to surface roughening. Further efforts will be made to mitigate this issue.