[16p-PA7-1~40] 17 Nanocarbon and Two-Dimensional Materials (Poster) | The 73rd JSAP Spring Meeting 2026

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Session Details

Poster presentation17 Nanocarbon and Two-Dimensional Materials : 17 Nanocarbon and Two-Dimensional Materials (Poster)

[16p-PA7-1~40]17 Nanocarbon and Two-Dimensional Materials (Poster)

Mon. Mar 16, 2026 4:30 PM - 6:00 PM JST
Mon. Mar 16, 2026 7:30 AM - 9:00 AM UTC

PA7 (Arena (1F))

[16p-PA7-1]Selective CVD Growth of MoS₂ Using an Au-Patterned MoO₃ Source Substrate

〇shogo kawaminami¹, Atushi Ando², Shin-ichi Yamamoto¹ (1.Ryukoku Univ., 2.AIST)

[16p-PA7-2]Direct CVD growth of MoS₂/graphene heterostructure on sapphire.

〇(M1)Yuuki Ohara¹, Kae Yokohira¹, Takato Oda, Hiroki Hibino¹ (1.Kwansei Gakuin Univ.)

[16p-PA7-3]Effect of CVD Growth Space Control via Spacer Introduction on MoS₂ Crystal Growth

〇(B)Kuu Nakamura¹, Shogo Kawaminami¹, Atsushi Ando², Shin-ichi Yamamoto¹ (1.Ryukoku Univ., 2.AIST)

[16p-PA7-4]Growth of WS₂ thin films at substrate/Au at interface using W precursors

〇(M1)Kenta Takei¹, Keiji Ueno¹, Hong En Lim¹ (1.Saitama Univ.)

[16p-PA7-5]Temperature Dependence of MoS₂ Film Growth in CVD Synthesis Using Paste-Type MoO₃

〇Naoto Maeda¹, Atushi Ando², Shogo Kawaminami¹, Kuu Nakamura¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ., 2.AIST)

[16p-PA7-6]Effect of Self-Assembled Monolayers Formed on MoO₃Thin-Film Sources on the CVD Growth of Monolayer MoS₂

〇Kaede Kikuya¹, Shi-ichi Yamamoto¹, Syougo Kawaminami¹, Kuu Nakamura¹, Atushi Ando² (1.Ryukoku Univ., 2.AIST)

[16p-PA7-7]CVD growth of monolayer MoS₂ on Au(111) and transfer with UV tape

〇Naoki Watari¹, Kaichi Yamamoto¹, Satoru Fukamachi¹, Pablo Solis-Fernandez¹, Shogo Tamura², Tomonori Ikari², Hiroki Ago^1,3 (1.Kyushu Univ., 2.Nat. Inst. Tech., 3.CSeDE)

[16p-PA7-8]Growth of Transition Metal Dichalcogenide Thin Films on High-κ Insulator Deposited by Mist CVD

Koushirou Kawakami¹, 〇(B)Yuki Matsuoka¹, Tenryuu Tamura¹, Abdul Kuddus², Keiji Ueno³, Hong En Lim³, Hajime Shirai⁴, Shinichirou Mouri¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.Saitama Univ., 4.Kanagawa Univ.)

[16p-PA7-9]Quasi-Oriented Growth of Surface-Flat WO_x Nanowires Using Na₂WO₄/WO_x Film Precursors and Template Growth of Monolayer WS₂

〇Ryosei Ito¹, Ikuho Kanesaki¹, Yasuhiko Hayashi¹, Hiroo Suzuki¹ (1.Okayama Univ.)

[16p-PA7-10]CVD Growth of Multilayer h-BN on Ferroelectric Substrate

〇Takuto Inaba¹, Shinichiro Mouri¹, Kuddus Abdul² (1.Ritsumeikan Univ., 2.R-GIRO)

English Presentation

[16p-PA7-11]In situ TEM Observation of Ductile-like Fracture in MoS₂ nanosheet Under Strain

〇(PC)Wei Xiong¹, Yoshifumi Oshima¹ (1.JAIST)

[16p-PA7-12]CVD growth of MoTe₂ and its electrical properties

〇Yasushi Ishiguro¹, Yuichiro Isaka¹, Yutaka Wakayama², Takashi Tachiki¹ (1.National Defense Acad., 2.NIMS)

[16p-PA7-13]Controlled Growth of β-phase MoTe₂ Nanoribbons via Chemical Vapor Deposition

〇(M2)Itsuki Yamada¹, Shintaro Saito¹, Zheng Liu², Yusuke Nakanishi³, Yasumitsu Miyata⁴, Keiji Ueno¹, Hong En Lim¹ (1.Saitama Univ., 2.AIST, 3.Univ. Tokyo, 4.NIMS)

[16p-PA7-14]Synthesis of MoS₂ from paint raw materials through CS2 treatment

〇Minori Shinohara¹, waizumi hiroki¹, yokokura seiya¹, shimada toshihiro¹ (1.Hokkaido Univ.)

[16p-PA7-15]Exploration of Bi₂Se₃ Fabrication Methods with Structural and Electronic Characterization

〇(B)Toshiki Mori¹, Hiroki Waizumi¹, Seiya Yokokura¹, Toshihiro Shimada¹ (1.Hokkaido Univ.)

[16p-PA7-16]Sb-doped 2D SnO nanosheets fabricated via liquid Sn-Sb alloy printing

〇Shunjiro Fujii¹, Kazuo Ishihra¹, Naoki Fukumuro¹, Atsushi Kogo² (1.Univ. hyogo, 2.AIST)

[16p-PA7-17]Formation of MoSe₂/Janus SMoSe via plasma treatment and selenization

〇Mayu Yamaguchi¹, Keiji Ueno¹, Hong En Lim¹ (1.Saitama Univ.)

[16p-PA7-18]Epitaxial Growth and Janusization of Gallium Selenide Monolayers

〇Yusuke Motoki¹, Hong En Lim¹, Keiji Ueno¹ (1.Saitama Univ.)

[16p-PA7-19]Impact of Metal Thin-Film Formation on Raman Spectra of Monolayer MoS₂

〇Tetsuhiko Tanikawa^1,2, Chang Wen-Hsin¹, Nishino Ryutaro¹, Kawanago Takamasa¹, Irisawa Toshifumi¹, Okada Naoya¹ (1.SFRC, AIST, 2.Nihon Univ.)

[16p-PA7-20]Optical evaluation of band offset and observation of interlayer excitons in MoSe₂/MoS₂ hetero-bilayer

〇(M1)Yuki Izumi¹, Satoru Adachi¹, Reina Kaji¹, S.-C. Lin², H.-W. Ting², W.-H. Chang² (1.Hokkaido univ, 2.NYCU)

[16p-PA7-21]Multimodal spectral imaging analysis of MoS2 sheets under Ar-plasma mediated F treatment

〇(B)Yuta Suwa^1,2, Naoka Nagamura^1,2, Masahito Kotsugi¹, Ryou Nouchi³ (1.Tokyo Univ. of Sci., 2.NIMS, 3.Osaka Metropolitan Univ.)

English Presentation

[16p-PA7-22]Molybdenum Disulfide (MoS2): Superconductivity and Gate-Controlled K+ Intercalation

〇(DC)Alec Paul Romagosa^1,2, Ricky Dwi Septiano², Hideki Matsuoka^2,3, Yutaka Majima¹, Yoshihiro Iwasa^2,3 (1.Science Tokyo, 2.RIKEN, 3.Tokyo Univ.)

[16p-PA7-23]Potential of layered IV-V compound GeAs as p-type two-dimensional channel material

〇Noriyuki Urakami¹, Ayuta Hasumi¹, Yosuke Kimoto¹, Yoshio Hashimoto¹ (1.Shinshu Univ.)

[16p-PA7-24]Carrier Dynamics of Photon Enhanced Thermionic Emission from MoS₂ Surface Layers on p-Si

〇(M1)Rikiya Matsushima¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

[16p-PA7-25]Development of anode electrodes using exfoliated MXene for Li-ion secondary battery

〇YUNO TANAKA¹, KENJI SASAKI¹, NORIHIRO SHIMOI¹, HIROTAKA OOI², NOBUYUKI YOSHINO² (1.Tohoku Inst. Tech., 2.Japan Mat. Tech. Corp.)

[16p-PA7-26]Voltage-Induced Phase Transition of Strained VO2 Single Crystals Based on Hysteresis

〇Taisuke Kasahara¹, Mitsuru Inada¹, Mahito Yamamoto¹ (1.Kansai Univ.)

[16p-PA7-27]Characterization of TaOx Thin Films Formed by Solution-Processed TaS2

〇Sora Kawai¹, Ayane Nomi², Kota Arai², Mitsuru Inada², Shingo Sato², Tomokazu Takahashi², Seiji Aoyagi², Keiji Ueno³, Mahito Yamamoto² (1.Kansai Univ., 2.Grad. Sch. Kansai Univ., 3.Saitama Univ.)

[16p-PA7-28]Performance enhancement and operation stabilization of field-effect transistors with indium selenide channel layers

〇Haruto Watanabe¹, Lim Hong En¹, Keiji Ueno¹ (1.Saitama Univ.)

[16p-PA7-29]Impact of Molecular Adsorption on the Electrical Properties of Monolayer MoTe₂ Channel Field-Effect Transistors

〇Takuto Ono¹, Kenji Watanabe², Takashi Taniguchi², Yusuke Hoshi¹ (1.Tokyo City Univ., 2.NIMS)

English Presentation

[16p-PA7-30]Study of magnetoconductivity in dopant molecule-2D material hybrids

〇Mao Xu¹, Hikaru Okuma¹, Kazunori Ueno¹, Daisuke Kiriya¹ (1.Univ. of Tokyo)

[16p-PA7-31]Nonvolatile Memory Devices Based on Ionic Liquid Gating in Two-Dimensional Semiconductor Materials for Neuromorphic Applications

〇(M1C)Shuto Kazama¹, Akira Aikawa¹, Shouta Sato¹, Ren Ogawa¹, Aoi Matumoto¹, Yoriko Suda¹, Ryoma Hayakawa^1,2, Yutaka Wakayama², Shu Nakaharai¹ (1.Tokyo Univ Tech., 2.NIMS)

[16p-PA7-32]Channel Width Dependent Characteristics of Two-Dimensional Semiconductors Induced by Surface Charge Transfer Doping

〇(DC)Takashi Kobayashi¹, Daisuke Kiriya¹ (1.Univ. of Tokyo)

[16p-PA7-33]Development of Sensor Devices with Molecular Selectivity Using MoS₂

〇Ayano Takahashi¹, Wataru Ise¹, Seiya Yokokura¹, Hiroki Waisumi¹, Toshihiro Shimada¹ (1.Hokkaido Univ.)

English Presentation

[16p-PA7-34]Chemo-Electronic MoS2 Acetone Sensor at Room Temperature via Surface modulation by A Charge Transfer Complex

〇(D)CHEN LI¹, Guanting Li¹, Ramaraj Sakar Ganesh¹, Mao Xu¹, Hitoshi Tabata¹, Daisuke Kiriya¹ (1.Univ. Tokyo)

[16p-PA7-35]Deposition of AlHfO on ITO Substrates and Investigation of Gate Dielectric Films Application for MoS₂ Devices

Tenryu Tamura¹, 〇(B)Yuta Yokochi¹, Shinichiro Mouri¹, Abdul Kuddus² (1.Ritsumeikan Univ., 2.R-GIRO)

Session Details

[16p-PA7-1~40]17 Nanocarbon and Two-Dimensional Materials (Poster)

[16p-PA7-1]Selective CVD Growth of MoS2 Using an Au-Patterned MoO3 Source Substrate

[16p-PA7-2]Direct CVD growth of MoS2/graphene heterostructure on sapphire.

[16p-PA7-3]Effect of CVD Growth Space Control via Spacer Introduction on MoS2 Crystal Growth

[16p-PA7-4]Growth of WS2 thin films at substrate/Au at interface using W precursors

[16p-PA7-5]Temperature Dependence of MoS2 Film Growth in CVD Synthesis Using Paste-Type MoO3

[16p-PA7-6]Effect of Self-Assembled Monolayers Formed on MoO3 Thin-Film Sources on the CVD Growth of Monolayer MoS2

[16p-PA7-7]CVD growth of monolayer MoS2 on Au(111) and transfer with UV tape

[16p-PA7-8]Growth of Transition Metal Dichalcogenide Thin Films on High-κ Insulator Deposited by Mist CVD

[16p-PA7-9]Quasi-Oriented Growth of Surface-Flat WOx Nanowires Using Na2WO4/WOx Film Precursors and Template Growth of Monolayer WS2

[16p-PA7-10]CVD Growth of Multilayer h-BN on Ferroelectric Substrate

[16p-PA7-11]In situ TEM Observation of Ductile-like Fracture in MoS2 nanosheet Under Strain

[16p-PA7-12]CVD growth of MoTe2 and its electrical properties

[16p-PA7-13]Controlled Growth of β-phase MoTe2 Nanoribbons via Chemical Vapor Deposition

[16p-PA7-14]Synthesis of MoS2 from paint raw materials through CS2 treatment

[16p-PA7-15]Exploration of Bi2Se3 Fabrication Methods with Structural and Electronic Characterization

[16p-PA7-16]Sb-doped 2D SnO nanosheets fabricated via liquid Sn-Sb alloy printing

[16p-PA7-17]Formation of MoSe2/Janus SMoSe via plasma treatment and selenization

[16p-PA7-18]Epitaxial Growth and Janusization of Gallium Selenide Monolayers

[16p-PA7-19]Impact of Metal Thin-Film Formation on Raman Spectra of Monolayer MoS2

[16p-PA7-20]Optical evaluation of band offset and observation of interlayer excitons in MoSe2/MoS2 hetero-bilayer

[16p-PA7-21]Multimodal spectral imaging analysis of MoS2 sheets under Ar-plasma mediated F treatment

[16p-PA7-22]Molybdenum Disulfide (MoS2): Superconductivity and Gate-Controlled K+ Intercalation

[16p-PA7-23]Potential of layered IV-V compound GeAs as p-type two-dimensional channel material

[16p-PA7-24]Carrier Dynamics of Photon Enhanced Thermionic Emission from MoS2 Surface Layers on p-Si

[16p-PA7-25]Development of anode electrodes using exfoliated MXene for Li-ion secondary battery

[16p-PA7-26]Voltage-Induced Phase Transition of Strained VO2 Single Crystals Based on Hysteresis

[16p-PA7-27]Characterization of TaOx Thin Films Formed by Solution-Processed TaS2

[16p-PA7-28]Performance enhancement and operation stabilization of field-effect transistors with indium selenide channel layers

[16p-PA7-29]Impact of Molecular Adsorption on the Electrical Properties of Monolayer MoTe2 Channel Field-Effect Transistors

[16p-PA7-30]Study of magnetoconductivity in dopant molecule-2D material hybrids

[16p-PA7-31]Nonvolatile Memory Devices Based on Ionic Liquid Gating in Two-Dimensional Semiconductor Materials for Neuromorphic Applications

[16p-PA7-32]Channel Width Dependent Characteristics of Two-Dimensional Semiconductors Induced by Surface Charge Transfer Doping

[16p-PA7-33]Development of Sensor Devices with Molecular Selectivity Using MoS2

[16p-PA7-34]Chemo-Electronic MoS2 Acetone Sensor at Room Temperature via Surface modulation by A Charge Transfer Complex

[16p-PA7-35]Deposition of AlHfO on ITO Substrates and Investigation of Gate Dielectric Films Application for MoS2 Devices

[16p-PA7-36]Evaluation of Schottky Contact Characteristics of Sb2Te3 Contacts on MoS2

[16p-PA7-37]Formation of 2D Contacts for WSe2 P-FET Toward Suppressing Ambipolar Operation

[16p-PA7-38]AFM-Patterned Graphene Slit Gates for One-Dimensional Exciton Confinement in 2D Semiconductors

[16p-PA7-39]Water-Induced Operational Instability at Electrode Contacts in MoS2 FETs

[16p-PA7-40]Development of an automated stacking system for artificial 2D material heterostructures

[16p-PA7-1]Selective CVD Growth of MoS₂ Using an Au-Patterned MoO₃ Source Substrate

[16p-PA7-2]Direct CVD growth of MoS₂/graphene heterostructure on sapphire.

[16p-PA7-3]Effect of CVD Growth Space Control via Spacer Introduction on MoS₂ Crystal Growth

[16p-PA7-4]Growth of WS₂ thin films at substrate/Au at interface using W precursors

[16p-PA7-5]Temperature Dependence of MoS₂ Film Growth in CVD Synthesis Using Paste-Type MoO₃

[16p-PA7-6]Effect of Self-Assembled Monolayers Formed on MoO₃Thin-Film Sources on the CVD Growth of Monolayer MoS₂

[16p-PA7-7]CVD growth of monolayer MoS₂ on Au(111) and transfer with UV tape

[16p-PA7-9]Quasi-Oriented Growth of Surface-Flat WO_x Nanowires Using Na₂WO₄/WO_x Film Precursors and Template Growth of Monolayer WS₂

[16p-PA7-11]In situ TEM Observation of Ductile-like Fracture in MoS₂ nanosheet Under Strain

[16p-PA7-12]CVD growth of MoTe₂ and its electrical properties

[16p-PA7-13]Controlled Growth of β-phase MoTe₂ Nanoribbons via Chemical Vapor Deposition

[16p-PA7-14]Synthesis of MoS₂ from paint raw materials through CS2 treatment

[16p-PA7-15]Exploration of Bi₂Se₃ Fabrication Methods with Structural and Electronic Characterization

[16p-PA7-17]Formation of MoSe₂/Janus SMoSe via plasma treatment and selenization

[16p-PA7-19]Impact of Metal Thin-Film Formation on Raman Spectra of Monolayer MoS₂

[16p-PA7-20]Optical evaluation of band offset and observation of interlayer excitons in MoSe₂/MoS₂ hetero-bilayer

[16p-PA7-24]Carrier Dynamics of Photon Enhanced Thermionic Emission from MoS₂ Surface Layers on p-Si

[16p-PA7-29]Impact of Molecular Adsorption on the Electrical Properties of Monolayer MoTe₂ Channel Field-Effect Transistors

[16p-PA7-33]Development of Sensor Devices with Molecular Selectivity Using MoS₂

[16p-PA7-35]Deposition of AlHfO on ITO Substrates and Investigation of Gate Dielectric Films Application for MoS₂ Devices

[16p-PA7-36]Evaluation of Schottky Contact Characteristics of Sb₂Te₃ Contacts on MoS₂

[16p-PA7-37]Formation of 2D Contacts for WSe₂ P-FET Toward Suppressing Ambipolar Operation

[16p-PA7-39]Water-Induced Operational Instability at Electrode Contacts in MoS₂ FETs