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[16p-PA7-18]Epitaxial Growth and Janusization of Gallium Selenide Monolayers
〇Yusuke Motoki1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)
Keywords:
Layered material,Gallium Selenide,Janus
Layered semiconductor GaSe is promising for applications such as field-effect transistors. Recently, the synthesis of Janus structures in GaSe monolayers, where one Se layer is replaced by another chalcogen, has attracted significant attention. In this study, we investigated the molecular beam epitaxy growth of GaSe monolayers on MoS2 substrates and their conversion into Janus structures via sulfur annealing. Raman spectroscopy revealed distinct spectral changes before and after the sulfur annealing.