Presentation Information
[16p-PA7-28]Performance enhancement and operation stabilization of field-effect transistors with indium selenide channel layers
〇Haruto Watanabe1, Lim Hong En1, Keiji Ueno1 (1.Saitama Univ.)
Keywords:
layered material,indium selenide,field-effect transistor
FETs using InSe as a channel layer are expected to be applied in high-performance devices due to their high charge carrier mobility and the potential for miniaturization derived from the layered structure. However, InSe is prone to rapid oxidation in air, which leads to significant performance degradation when fabricated into devices. In this study, we attempted to improve the performance of InSe FETs through HMDS treatment of SiO2 /p++Si substrates. Furthermore, we transferred GaS, a highly insulating layered material, onto InSe as a protective layer and evaluated its effectiveness in suppressing degradation.