Presentation Information
[16p-PA7-35]Deposition of AlHfO on ITO Substrates and Investigation of Gate Dielectric Films Application for MoS2 Devices
Tenryu Tamura1, 〇(B)Yuta Yokochi1, Shinichiro Mouri1, Abdul Kuddus2 (1.Ritsumeikan Univ., 2.R-GIRO)
Keywords:
MoS2 Device,High k Gate Dielectric Films
AlHfO films were deposited on ITO substrates by mist CVD and evaluated as gate dielectrics for MoS2 devices. C–F measurements indicated a dielectric constant of ~15, and MoS2-MOSFETs showed gate modulation, though leakage increased at high voltages.