Presentation Information
[16p-PA7-4]Growth of WS2 thin films at substrate/Au at interface using W precursors
〇(M1)Kenta Takei1, Keiji Ueno1, Hong En Lim1 (1.Saitama Univ.)
Keywords:
layered material,semiconductor,growth technology
Atomically thin films of tungsten disulfide (WS2) exhibit favorable semiconductor properties and are expected to be applied to microdevices. However, contamination and damage to the thin films by the electrode deposition process remain major challenges. To address this issue, this study attempts to grow WS2 thin films at the interface between the substrate and the electrode metal. After sequentially depositing a W precursor thin film and an Au thin film onto the substrate, a heat sulfurization process was performed. As a result, WS2 thin films were formed beneath the Au thin film.