Presentation Information
[16p-PA7-8]Growth of Transition Metal Dichalcogenide Thin Films on High-κ Insulator Deposited by Mist CVD
Koushirou Kawakami1, 〇(B)Yuki Matsuoka1, Tenryuu Tamura1, Abdul Kuddus2, Keiji Ueno3, Hong En Lim3, Hajime Shirai4, Shinichirou Mouri1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.Saitama Univ., 4.Kanagawa Univ.)
Keywords:
MoS2,high-k,CVD
Direct growth of atomically thin materials on high-k dielectric films is essential for device scaling and high performance. In this study, MoS2 was directly grown by CVD on Al1–xTixOy high-k dielectric films deposited by mist CVD, and its optical and MOSFET characteristics were evaluated. Photoluminescence measurements confirmed the formation of monolayer to bilayer MoS2, and gate-voltage-induced current modulation was observed. The dependence of material properties on the Al1–xTixOy composition is also discussed.