[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:00 PM - 2:45 PM JST(5:00 AM - 5:45 AM UTC)

[16p-S2_203-1] [The 26th Outstanding Achievement Award Speech] The understanding of carrier transport properties in MOS transistors and the advancement of high-performance device technologies

〇Shinichi Takagi¹ (1.Teikyo Univ., ACRO)

Keywords:

MOSFET,carrier transport properties,mobility

I am deeply honored and grateful to receive the prestigious the Japan Society of Applied Physics Outstanding Achievement Award. For over 40 years, I have consistently dedicated myself to research on MOSFETs, which play a crucial role in the performance of semiconductor integrated circuits. My work has focused on advancing the physical understanding of carrier transport phenomena in the inversion layer that forms the channel, as well as MOS interface characteristics. This research has been conducted in parallel with the progress of Si technology in industry, aiming to enhance the high performance and reliability of MOSFETs. In this presentation, I will briefly introduce some aspects of my research to date.