[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-S2_203-10] Gate-Bias-Dependence of Drain Current RTN at Room and Cryogenic Temperatures

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, TAKUYA SARAYA¹, HIROSHI OKA², TAKAHIRO MORI², MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo, 2.AIST)

Keywords:

random telegraph noise,MOSFET

Low-frequency noise of MOSFETs at cryogenic temperatures is not yet well understood. In this work, we experimentally investigated and analyzed the amplitude of drain-current Random Telegraph Noise (RTN) at both cryogenic and room temperatures using a Device Matrix Array.