[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[16p-S2_203-12] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (18) -Derivation method of σ-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

single interface defects,charge pumping,capture cross section

We propose a novel derivation method for the capture cross section of electrons/holes at MOS interface trap levels. This approach differs from previous methods in that it utilizes a “double-peak” shape DOS obtained from measurements of single trap units. If an accurate DOS is obtained by ESR, the capture cross section is derived by matching the positions of these two peaks. Crucially, the fitting parameter in this process is solely the capture cross-section value.