Presentation Information
[16p-S2_203-3][The 59th Young Scientist Presentation Award Speech] Cryogenic conductance calculation of highly doped Si for advanced CMOS applications
〇Keito Yoshinaga1, Ryo Toyoshima1, Munehiro Tada2, Ken Uchida1 (1.Univ. Tokyo, 2.Keio Univ.)
Keywords:
cryogenic,hopping conduction,semiconductor
Bulk CMOS technology excels in controlling the threshold voltage through body biasing. However, at cryogenic temperatures, the increase in substrate (well) resistance caused by carrier freeze-out can lead to operational failures. Consequently, it is critical to develop a methodology for the quantitative estimation of its electrical conductivity. In our previous presentation, we identified three critical factors for calculating the conductivity of variable-range hopping (VRH) in Si n-type wells, which becomes dominant at cryogenic temperatures: 1) accounting for donor ionization by compensated acceptors, 2) considering the screening contributions from electrons capable of VRH conduction, and 3) performing numerical calculations of hopping probability that incorporate the energy dependence of the density of states (DOS). In this presentation, we describe the specific details of these calculations.