[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-S2_203-4] Temperature dependence of surface-roughness-limited mobility in (100) Si n-MOSFETs

〇Shinichi Takagi¹, Kei Sumita², Xueyang Han², Zhao Jin², Yutong Chen², Mitsuru Takenaka², Kasidit Toprasertpong² (1.Teikyo Univ., ACRO, 2.The Univ. Tokyo)

Keywords:

MOSFET,mobility,surface roughness scattering

A systematic evaluation of the temperature dependence of the mobility in (100) Si n-MOSFETs and comparison with theoretical calculations revealed that the theoretical calculations using the proposed roughness scattering model can reproduce the experimental mobility results over a wide temperature range of 20-300K. The surface roughness scattering mobility exhibits temperature dependence even near room temperature. This is attributed to the reduction in Δ₄-valley electrons at low temperatures, which lowers the average electric field and enhances the mobility.