[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-S2_203-5] Gate Length Dependence of Subthreshold Swing in Cryogenic MOSFETs

〇(M1)Takumi Katori^1,2, Hidehiro Asai¹, Hiroshi Oka¹, Kimihiko Kato¹, Takumi Inaba¹, Yuika Kobayashi¹, Satoshi Moriyama², Takahiro Mori¹ (1.AIST, 2.Tokyo Denki Univ.)

Keywords:

Cryo-CMOS,Subthreshold Swing,TCAD Simulation

Cryo-CMOS circuits are considered a key solution for large-scale quantum computer. However, MOSFET characteristics at cryogenic temperatures differ greatly from those at room temperature. We investigated the gate length dependence of subthreshold swing and found unique characteristics under cryogenic conditions.