[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[16p-S2_203-7] Reverse Short Channel Effect of MOSFETs at Cryogenic Temperatures

〇ZIJIA FENG¹, Tomoko Mizutani¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.The Univ. of Tokyo)

Keywords:

semiconductor,MOSFET,cryogenic temperature

MOSFETs operating at cryogenic temperatures play a key role in the peripheral circuits of quantum computers. Many studies have examined the characteristics of cryogenic MOSFETs. Measurement results show that the reverse short-channel effect in halo-doped MOSFETs becomes weaker at cryogenic temperatures compared to room temperature. However, this phenomenon still lacks physical explanation. This research aims to reconfirm this behavior by measurements and clarify its physical origin by device simulation.