[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[16p-S2_203-8] A Study on the Origin of Drain Current RTN Under Strong Inversion at Cryogenic Temperatures

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, TAKUYA SARAYA¹, HIROSHI OKA², TAKAHIRO MORI², SHINICHI TAKAGI³, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo, 2.AIST, 3.Teikyo Univ.)

Keywords:

random telegraph noise,MOSFET

Understanding of low-frequency noise necessary for Cryo-CMOS design still remains insufficient. In this study, we selected a small number of devices that exhibit clear Random Telegraph Noise (RTN) at cryogenic temperatures, and attempted to gain insights into the physical origin of RTN by precisely measuring the gate-bias dependence of their transition time constants.