[16p-S2_203-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-S2_203-9] Analysis of Subthreshold Current Variability in Bulk and FDSOI MOSFETs at Cryogenic Temperatures

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Inaba Takumi², Oka Hiroshi², Asai Hidehiro², Mori Takahiro², Kobayashi Masaharu¹, Hiramoto Toshiro¹ (1.Univ. of Tokyo,, 2.AIST)

Keywords:

cryogenic,variability,Subthreshold current

Variability of subthreshold characteristics in bulk and FDSOI MOSFETs were measured at both 1.5 and 300K by using addressable device matrix arrays. For two bulk MOSFETs with different fabrication processes and one FDSOI MOSFET, common trends were observed.