Presentation Information

[16p-S4_203-3]Current characteristics of LaB6 emitter in Schottky mode with respect to emitter surface orientation

〇Takaharu Ito1, Yosuke Sugiyama1, Ayuma Ohta1, Hidekazu Murata1, Takayuki Tanaka1, Eiji Rokuta1 (1.Meijo Univ.)

Keywords:

LaB6,Schottky electron emission,Work function

The enhancement of next-generation electron beam lithography equipment's performance necessitates a high-performance electron source. Achieving this requires the development of an electron gun that meets the conditions of high brightness, large current, high stability, and long lifespan. We have been developing electron sources utilizing LaB6 that fulfill these criteria. In a previous study, we reported a phenomenon where the current decreases when a high voltage is applied to the emitter. In this study, we conducted an evaluation of the Schottky emission current at the emitter tip surface for each crystallographic orientation, and we report the findings.