Session Details
[16p-S4_203-1~9]7.2 Applications and technologies of electron beams
Mon. Mar 16, 2026 2:00 PM - 4:30 PM JST
Mon. Mar 16, 2026 5:00 AM - 7:30 AM UTC
Mon. Mar 16, 2026 5:00 AM - 7:30 AM UTC
S4_203 (South Bldg. 4)
[16p-S4_203-1]Analysis of Aberration Characteristics during Electron Source Tilting using the Boundary Charge Method
〇Yasunari Sohda1, Ippo Kishida1, Hidekazu Murata2 (1.Univ. of Tsukuba, 2.Meijo Univ.)
[16p-S4_203-2]Angular current density dependence of virtual source size in Schottky electron source.
〇(M1)Yuki Hayashida1, Soichiro Matsunaga1,2,3, Yoichi Yamada1 (1.Tsukuba Univ., 2.Hitachi, Ltd., 3.Hitachi High-Tech)
[16p-S4_203-3]Current characteristics of LaB6 emitter in Schottky mode with respect to emitter surface orientation
〇Takaharu Ito1, Yosuke Sugiyama1, Ayuma Ohta1, Hidekazu Murata1, Takayuki Tanaka1, Eiji Rokuta1 (1.Meijo Univ.)
[16p-S4_203-4]Study on the Application of Visible-Light-Induced Electron Emission from Organic Molecules for Photocathodes
〇(D)Manato Tateno1, Ryotaro Nakazawa5, Takuji Hatakeyama6, Shintaro Mitsui2, Hisao Ishii1,2,3,4, Hirohiko Hukagawa1,2,3,4 (1.GSSE Chiba Univ., 2.F.Eng. Chiba Univ., 3.CFS Chiba Univ., 4.MCRC Chiba Univ., 5.IMS, 6.Grad. Sch. Sci. Kyoto Univ.)
[16p-S4_203-5]AlGaAs Molecular Beam Epitaxial Growth and Characteristics of AlGaAs Thin Films on Sapphire (0001) Substrate
〇Sota Wajima1,2, Hidetoshi Hashimoto1,2, Daiki Sato3, Atsushi Koizumi3, Tomohiro Nishitani3, Fumitaro Ishikawa2 (1.Hokkaido Univ., 2.Hokkaido Univ.RCIQE, 3.Photo electron Soul Inc.)
[16p-S4_203-6]Upgrade Plan of the Electron Source and Injector at the X-ray Free-electron Laser Facility SACLA
〇Kazuaki Togawa1 (1.RIKEN)
[16p-S4_203-7]Development of Tomographic Field Ion Microscope Assisted by Object Detection Model
Jiayu Li1, Takumi Seko1, Tatsuo Iwata1, 〇Shigekazu Nagai1 (1.Mie Univ.)
[16p-S4_203-8]Change in Surface Oxygen Bonding States in Hafnium Nitride Thin Films upon Heating
〇Tomoaki Osumi1, Yasuhito Gotoh1 (1.Kyoto Univ.)
[16p-S4_203-9]Estimation of the emitter tip curvature radius in TiN coated volcano-structured field emitter array
〇Yusuke Kawasaki1, Hidekazu Murata1, Hiromasa Murata2, Masayoshi Nagao2 (1.Meijo Univ., 2.AIST)
