[16p-S4_203-1~9] 7.2 Applications and technologies of electron beams

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-S4_203-8] Change in Surface Oxygen Bonding States in Hafnium Nitride Thin Films upon Heating

〇Tomoaki Osumi¹, Yasuhito Gotoh¹ (1.Kyoto Univ.)

Keywords:

hafnium nitride,x-ray photoelectron spectroscopy,surface oxygen

Photoelectron spectra of a hafnium nitride thin film were acquired at room temperature before heating, at 50℃ and every 100℃ from 100℃ to 500℃ during heating, and after cooling. The narrow scan O1s spectra revealed two peaks at 530 eV and 532 eV. The peak at 532 eV decreased with increasing temperature. The peak disappeared at 400℃ or above. After cooling, the peak remained absent. It was considered that the peak originated from water molecules and/or hydroxyl group on the film surface.