Presentation Information
[16p-W2_401-1]Growth of thin GaN film on AlN prepared by sputtering and face-to-face annealing and higher efficiency of UVC-LEDs
〇Ryota Akaike1,2, Hiroki Yasunaga2,3, Takao Nakamura1,2, Toshiyuki Obata4, Kenji Yamashita4, Masahiko Tsuchiya4, Hideto Miyake1,2 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. IC-SDF, 3.Mie Univ. ORIP, 4.Stanley Electric Co.)
Keywords:
UVC-LED,AlGaN
