[16p-W2_401-1~17] 15.4 III-V-group nitride crystals

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-11] Wavelength extension and device characteristics of AlGaN-based UV-B LD via AlN mole fraction Control

〇Tomoya Tanikawa¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Shion Kamiya¹, Yuma Miyamoto¹, Rintaro Kobayashi¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

semiconductor laser,AlGaN,ultraviolet (UV) laser

In this study, we investigated the extension of the lasing wavelength and its impact on device characteristics in AlGaN-based UV-B laser diodes by systematically controlling the AlN mole fraction in the quantum well active region. By optimizing the AlN mole fractions in the well, barrier, and waveguide layers, room-temperature pulsed lasing was achieved over a wide wavelength range of 297–326 nm. In particular, laser diodes operating at 297–312 nm exhibited favorable characteristics with threshold current densities below 5 kA/cm².