[16p-W2_401-1~17] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-12] Impact of Well/Guide Bandgap Difference on COD Characteristics of AlGaN-Based UV-B Laser Diodes

〇(B)Kenta Kitagawa¹, Takumu Saito¹, Rintaro Miyake¹, Naoki Kitta¹, Seiya Kato¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Sho Iwayama¹, Hideto Miyake², Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

semiconductor,laser diode,nitride

To improve the output power of AlGaN-based UV-B laser diodes (LDs), we investigated the impact of the bandgap energy difference (ΔEg) between the well and guide layers on internal loss and catastrophic optical damage (COD) characteristics. Gain-guided LDs with controlled Well/Guide ΔEg were fabricated, and an increase in ΔEg was found to reduce the internal loss α_i. As a result, both the maximum output power and COD level were enhanced, demonstrating that ΔEg is an effective design parameter for achieving high COD levels in UV-B LDs.