Presentation Information

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-13]RT-CW Oscillation of a 318 nm AlGaN-Based Laser Diode on a Sapphire Substrate

〇(M2)Rintaro Miyake¹, Takumu Saito¹, Shogo Karino¹, Shion Kamiya¹, Ryota Watanabe¹, Syo Iwayama¹, Hideto Miyake², Koichi Naniwae³, Yoshito Jin⁴, Masamitsu Toramaru⁴, Tatsuya Matsumoto⁴, Yoshihiro Shimazaki⁴, Hironori Torii⁵, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ., 3.Ushio Inc, 4.JSW, 5.JSW Afty)

Keywords:

semiconductor laser,room-temperature CW lasing

Ultraviolet-B (UV-B) wavelength lasers are increasingly demanded for medical and industrial applications, and achieving room-temperature continuous-wave (CW) operation of AlGaN-based laser diodes remains a critical challenge. In this study, we optimized the semiconductor epitaxial structure, refractive-index-guided ridge waveguide, high-reflectivity distributed Bragg reflector (DBR) mirrors, and junction-down mounting. As a result, room-temperature CW lasing was achieved for the first time in AlGaN-based laser diodes on sapphire substrates at a wavelength of 318 nm, with a threshold current of 64 mA and a threshold current density of 8.5 kA/cm².

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