[16p-W2_401-1~17] 15.4 III-V-group nitride crystals

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-14] Thermal Resistance Reduction in AlGaN-Based UV-B LDs via Packaging Structure Optimization

〇Shion Kamiya¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

semiconductor laser

Although AlGaN-based UV-B laser diodes have achieved continuous-wave operation at room temperature, their high thermal resistance remains a major obstacle to practical application. In this study, we focus on reducing thermal resistance through optimization of device mounting structures under the constraint of low thermal conductivity materials. Finite element method simulations were performed to compare junction-up, junction-down, and double-sided heat-spreading structures, clarifying the influence of heat dissipation paths on thermal resistance. In addition, the effect of submount thermal conductivity on further thermal resistance reduction was investigated for the optimal structure.