[16p-W2_401-1~17] 15.4 III-V-group nitride crystals

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-8] Correlation between Crystal Defects and Device Performance Degradation in AlGaN-Based UV-B Laser Diodes

〇Seiya Kato¹, Takumu Saito¹, Rintaro Miyake¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Shion Kamiya¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

semiconductor laser

In this study, the correlation between crystal defects and device performance degradation in AlGaN-based UV-B laser diodes was investigated. V-shaped pits, hillocks, and foreign particles were examined by directly correlating the presence of defects beneath the p-electrode with the J–L characteristics on a device-by-device basis. The results revealed that all of these defects cause degradation in threshold current density, slope efficiency, and maximum optical output power, indicating that they act as killer defects. These findings suggest that controlling such defects is essential for improving performance stability and achieving high-output operation of UV-B laser diodes.