[16p-W2_401-1~17] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W2_401-9] Improvement of optical gain characteristics in AlGaN UV-B laser diodes via low-temperature growth

〇Rintaro Kobayashi¹, Shundai Maruyama¹, Takumu Saito¹, Rintaro Miyake¹, Seiya Kato¹, Naoki Kitta¹, Ryota Watanabe¹, Yuma Miyamoto¹, Shion Kamiya¹, Tomoya Tanikawa¹, Kenta Kitagawa¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Mie Univ.)

Keywords:

UV-B laser diodes,AlGaN MOVPE growth,Optical gain characteristics

In AlGaN MOVPE growth, high-temperature growth (1000-1300 ℃) is generally considered advantageous for improving crystal quality; however, the optimal growth temperature for UV-B laser diodes (LDs) has not been fully clarified. In this study, samples were grown with growth temperatures systematically varied from 750 to 1000 °C, and their optical properties were evaluated. The results show that the sample grown at 775 °C exhibited narrower full widths at half maximum in the gain, photoluminescence (PL), and cathodoluminescence (CL) spectra. This suggests that suppression of compositional fluctuations at the interfaces leads to a more uniform gain distribution. These findings indicate that high-temperature growth conditions are not necessarily optimal for LDs.