[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W8E_101-13] Electric field measurements in SiC power device by silicon vacancy-based quantum sensors

〇Yuichi Yamazaki¹, Akira Kiyoi², Naoyuki Kawabata², Yuki Watanabe², Ryosuke Akashi¹, Shunsuke Daimon¹, Nobumasa Miyawaki¹, Yu-ichiro Matsushita^1,3,4, Makoto Kohda^1,5,6, Takeshi Ohshima^1,5 (1.QST, 2.Mitsubishi Electric Corporation, 3.Univ. of Tokyo, 4.Quemix Inc., 5.Tohoku Univ., 6.Univ. of Washington)

Keywords:

quantum sensor,electric field,silicon vacancy

SiC power devices are already in practical use. Knowledge of electric fields is still essential for their design and failure detection. However, there is currently no method capable of measuring electric fields inside the device with high sensitivity and high spatial resolution, making simulation and other approaches unavoidable. This study conducted a detailed verification of the physical characteristics of V_Si-based quantum sensors as electric field measurement tools.