[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization | The 73rd JSAP Spring Meeting 2026

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[16p-W8E_101-1~15]13.7 Compound and power devices, process technology and characterization

Mon. Mar 16, 2026 1:30 PM - 6:00 PM JST
Mon. Mar 16, 2026 4:30 AM - 9:00 AM UTC

W8E_101 (West Bldg. 8)

1:30 PM - 2:15 PM JST(4:30 AM - 5:15 AM UTC)

[16p-W8E_101-1][The 26th Outstanding Achievement Award Speech] Semiconductor Superjunction - How the Idea Came About

〇Tatsuhiko Fujihira¹ (1.Fuji Electric)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-W8E_101-2]Destruction Behavior by Voltage Surge in Turn-Off Switching of GaN-HEMTs

〇Wataru Saito¹, Shin-ichi Nishizawa¹ (1.Kyushu Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-W8E_101-3]Light emission during gate switching in 4HSiC-UMOSFETs and the model for GSI

〇Naoki Kumagai¹, Sometani Mitsuru¹, Hirai Hirohisa¹, Okamoto Mitsuo¹, Hatakeyama Tetsuo² (1.Aist, 2.TPU)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[16p-W8E_101-4]Structure of Power SiC-MOS best suited to High Voltage h-DCCB Application

〇Satoshi Tanimoto¹, Yuki Nomura¹, Kei Nishioka¹, Takashi Nakamura¹ (1.NexFi Technology Inc.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-5]Understanding the Reaction Mechanism of Thermal N-Desorption Reactions during N-radical Nitridation of 4H-SiC Surface

〇Haruki Yoshida¹, Atsushi Tamura¹, Koji Kita¹ (1.GSFS, The Univ. of Tokyo)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-W8E_101-6]Anomalous enhancement of carbon-related defect formation in 4H-SiC surface region accompanied by SiO2 decomposition under high temperature Ar ambient and its structural difference by SiO2 formation methods

〇(D)Nan Su¹, Chuyang Lyu¹, Atsushi Tamura¹, Koji Kita¹ (1.Univ. of Tokyo)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-7]Effects of pre-deposition hydrogen annealing and sacrificial oxidation on SiO₂/SiC structures

〇(B)Shoto Sawada¹, Takuma Kobayashi¹, Hiroki Fujimoto¹, Masahiro Hara¹, Heiji Watanabe¹ (1.U Osaka)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-W8E_101-8]Characterization of SiC MOSFETs with an ultra-shallow counter-doped region

〇Kyota Mikami¹, Ryuta Kajiwara¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-W8E_101-9]Investigation of CO₂ Post-Oxidation Annealing Effects on the SiC–MOS Interface Using Mass-Production-Compatible Hot-Wall Oxidation Furnace

〇Mitsuru Sometani^1,2, Hirohisa Hirai¹, Naoki Kumagai¹, Hiroshi Yano³, Takanori Isobe³, Takuji Hosoi^2,4, Heiji Watanabe² (1.AIST, 2.UOsaka, 3.Univ. of Tsukuba, 4.NIMS)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-10]EDMR spectroscopy on interface defects in dry- and wet oxidized 4H-SiC(0001) MOSFETs

〇(M2)Bunta Shimabukuro¹, Keigo Adachi¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³ (1.Tsukuba Univ., 2.AIST, 3.UOsaka)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-11]Polarity control of photoinduced charges trapped at the SiC MOS interface

〇(D)Tetsuhiro Owa¹, Jin Miura¹, Fumiyuki Inamura¹, Takashi Ikuta¹, Kenzo Maehashi¹, Kenji Ikushima¹ (1.Tokyo Univ. of A & T)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-W8E_101-12]Long-Term High Temperature Characteristics of Schottky Barrier Diodes with Silicon-Capped-Annealed Electrodes

〇Takahito Fukuzawa¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W8E_101-13]Electric field measurements in SiC power device by silicon vacancy-based quantum sensors

〇Yuichi Yamazaki¹, Akira Kiyoi², Naoyuki Kawabata², Yuki Watanabe², Ryosuke Akashi¹, Shunsuke Daimon¹, Nobumasa Miyawaki¹, Yu-ichiro Matsushita^1,3,4, Makoto Kohda^1,5,6, Takeshi Ohshima^1,5 (1.QST, 2.Mitsubishi Electric Corporation, 3.Univ. of Tokyo, 4.Quemix Inc., 5.Tohoku Univ., 6.Univ. of Washington)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-14]Optical and electrical properties of SiO₂/SiC interface color centers on p-type SiC epilayers

〇Yu Kaneko¹, Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota Central R&D Labs., Inc.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-15]Photo-assisted C–V characterization of deep levels associated with SiO₂/SiC interface color centers

〇Kentaro Onishi¹, Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota CRDL)

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