[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-14] Optical and electrical properties of SiO₂/SiC interface color centers on p-type SiC epilayers

〇Yu Kaneko¹, Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota Central R&D Labs., Inc.)

Keywords:

SiC,Single photon emitter,MOS interface