[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W8E_101-15] Photo-assisted C–V characterization of deep levels associated with SiO₂/SiC interface color centers

〇Kentaro Onishi¹, Katsuhiro Kutsuki², Masahiro Hara¹, Heiji Watanabe¹, Takuma Kobayashi¹ (1.UOsaka, 2.Toyota CRDL)

Keywords:

SiO2/SiC interface,single-photon emitters