[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-W8E_101-2] Destruction Behavior by Voltage Surge in Turn-Off Switching of GaN-HEMTs

〇Wataru Saito¹, Shin-ichi Nishizawa¹ (1.Kyushu Univ.)

Keywords:

GaN-HEMT,overvoltage stress,avalanche breakdown

GaN-HEMTs are being put into practical use as power devices that enable highly efficient power conversion owing to their low on-resistance and high-speed switching capability. However, when avalanche breakdown occurs under high-voltage application, devices failure. In the previous work, the failure process of GaN-HEMTs under repetitive overvoltage stress at low current levels has been reported. In this presentation, we report the destruction behavior of GaN-HEMTs when overvoltage stress is applied under conditions of high current conduction.