[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[16p-W8E_101-3] Light emission during gate switching in 4HSiC-UMOSFETs and the model for GSI

〇Naoki Kumagai¹, Sometani Mitsuru¹, Hirai Hirohisa¹, Okamoto Mitsuo¹, Hatakeyama Tetsuo² (1.Aist, 2.TPU)

Keywords:

SiC,Gate Switching Instability,Emission spectrum

As a model of GSI (Gate Switching Instability) in SiC-MOSFET, we have proposed a light-assisted +Auger recombination model, which assumes that inversion layer electrons are injected into the oxide film due to the energy of recombination light emission and Auger recombination. In this report, we show that this model can explain various dependencies of the emission spectrum during switching in 4H-SiC UMOSFETs.