[16p-W8E_101-1~15] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[16p-W8E_101-6] Anomalous enhancement of carbon-related defect formation in 4H-SiC surface region accompanied by SiO2 decomposition under high temperature Ar ambient and its structural difference by SiO2 formation methods

〇(D)Nan Su¹, Chuyang Lyu¹, Atsushi Tamura¹, Koji Kita¹ (1.Univ. of Tokyo)

Keywords:

SiO2/SiC interface,4H-SiC

When SiC substrates with SiO2 films formed by thermal oxidation or ALD deposition were subjected to high-temperature Ar annealing, the formation and desorption of SiO proceeded at the SiO2/SiC interface. The FTIR analysis revealed that during this process, the carbon-related defects generated in the near-surface region of the SiC substrate were anomalously enhanced. Furthermore, depending on the SiO2 formation method (thermal oxidation or ALD deposition), obvious differences were observed in the amount and types of carbon-related defects formed during the decomposition and desorption processes.