[16p-W9_323-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-W9_323-11] Electrical and Optical characteristics of epitaxial Mg₃Sb₂/Si

〇Shunya Sakane¹, Nozomu Kiridoshi¹, Ryosuke Kobayashi¹, Akito Ayukawa¹, Koki Nejo¹, Takeru Kuriyama¹, Wakaba Yamamoto², Akira Yasuhara², Kohei Sato², Haruhiko Udono¹ (1.Ibaraki Univ., 2.JEOL)

Keywords:

Mg3Sb2,Zintl-phase compounds,Epitaxial growth

We have previously achieved the growth of c-axis oriented epitaxial Mg₃Sb₂ on Si substrates and confirmed rectifying properties and photoresponse for the first time. However, the optical properties of Mg₃Sb₂ have not yet been fully clarified. Therefore, this study aimed to investigate the electrical and photoresponse properties of epitaxial Mg₃Sb₂/Si in detail. Current-voltage (I-V) measurements performed on the fabricated photodiodes exhibited clear rectifying behavior. Moreover, spectral response measurements revealed distinct sensitivity in the 1200–1600 nm range at 170 K.