[16p-W9_323-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-W9_323-12] Fabrication of mesa-type β-FeSi₂ pn homojunction devices using photolithography

〇Aoi Matsumoto¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Keywords:

silicide,iron silicide,opto semiconductor