[16p-W9_323-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-W9_323-9] Mg₂Si PD Linear Array Fabrication and SWIR Imaging Demonstration

〇Yuki Iino¹, Hideto Takei¹, Yuya Tachimura¹, Hiroki Yamaguchi¹, Shunya Sakane¹, Takayuki Kimura¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,SWIR,Image Sensors

We developed a 32-pixel Mg2Si photodiode linear array (PDLA) for low-cost SWIR sensors. The device was fabricated by forming pn junctions via Ag-diffusion into n-type substrates. Using a custom readout circuit and a 1310 nm light source, we successfully captured SWIR images with high contrast and no pixel defects. This demonstrates that Mg2Si-based PDLAs possess practical imaging performance.