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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-W9_324-10]Homoepitaxial growth of thick β-Ga₂O₃ layers on 2-inch β-Ga₂O₃(010) substrates by low-pressure hot-wall MOVPE

〇Yoshiki Iba¹, Yuma Terauchi¹, Junya Yoshinaga^1,2, Yasuhiro Hashimoto³, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.Sumitomo Metal Mining Co., Ltd.)

Keywords:

Gallium oxide,MOVPE

β-Ga₂O3 has attracted considerable attention as a next-generation power device material. In particular, thick homoepitaxial layers with controlled n-type conductivity are required as drift layers for vertical power devices. In this study, we investigate homoepitaxial growth on 2-inch β-Ga₂O₃(010) substrates and report the growth results.

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[16p-W9_324-10]Homoepitaxial growth of thick β-Ga2O3 layers on 2-inch β-Ga2O3(010) substrates by low-pressure hot-wall MOVPE

Keywords:

[16p-W9_324-10]Homoepitaxial growth of thick β-Ga₂O₃ layers on 2-inch β-Ga₂O₃(010) substrates by low-pressure hot-wall MOVPE