[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W9_324-13] HCl-based halide vapor phase epitaxy and HCl gas etching on β-Ga₂O₃ with a surface orientation close to (011)

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,HVPE,etching