Presentation Information

Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-W9_324-1~17]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 16, 2026 1:30 PM - 6:30 PM JST
Mon. Mar 16, 2026 4:30 AM - 9:30 AM UTC

W9_324 (West Bldg. 9)

Chair : Takayoshi Oshima(NIMS), Kazuyuki Uno(Wakayama Univ.)

このセッションでは、Ga2O3を中心に、MOCVD、MBE、HVPE、ミストCVDなど多様な成膜技術による結晶成長、結晶構造・欠陥の評価と制御、SBDなどのデバイス応用に関する研究が報告されます。また、In-Ga-Zn系酸化物を用いたTFTの電気特性評価やプロセス最適化、GeO2、MgZnO、NiOなど新規酸化物材料の成膜技術と物性評価、デバイス展開についても議論されます。

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-W9_324-13]HCl-based halide vapor phase epitaxy and HCl gas etching on β-Ga₂O₃ with a surface orientation close to (011)

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Keywords:

Ga2O3,HVPE,etching

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Presentation Information

[16p-W9_324-13]HCl-based halide vapor phase epitaxy and HCl gas etching on β-Ga2O3 with a surface orientation close to (011)

Keywords:

Comment

[16p-W9_324-13]HCl-based halide vapor phase epitaxy and HCl gas etching on β-Ga₂O₃ with a surface orientation close to (011)