Presentation Information
[16p-W9_324-15]Development of high-quality 4’’ β-Ga2O3 (010) substrates via the VB method
〇Toshinori Taishi1, Yuki Yamamoto2, Shigenori Shimizu2, Kensuke Mizukoshi3, Takashi Nishinoiri3, Keigo Hoshikawa1 (1.Shinshu Univ., 2.Oxide Corp., 3.Ceratec Japan Corp.)
Keywords:
beta gallium oxide,bulk crystal growth,substrate
In this study, we report on the growth of 4-inch diameter Fe-doped [010] β-Ga2O3 single crystals by the VB method and high-quality β-Ga2O3 (010) single crystal substrates. The length of the 30 mm diameter section of the crystal is twin- and crack-free. The wafer was polished on both sides, and a diffraction pattern was obtained over the entire wafer surface with a half-width of approximately 15 arcsec, indicating that the crystal quality within the plane was uniform and of high quality.