[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[16p-W9_324-16] Evaluation on distribution of line-shaped voids in [010] β-Ga₂O₃ grown by the VB method

Ukyo Miyagi¹, 〇Toshinori Taishi¹, Keigo Hoshikawa¹ (1.Shinshu Univ.)

Keywords:

beta gallium oxide,bulk crystal growth,line-shaped defects

In this study, we investigated the volume density and longitudinal distribution of linear voids in a 4-inch diameter [010] β-Ga2O3 single crystal grown by the VB method using an optical wavefield three-dimensional microscope and etching with phosphoric acid.