[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-W9_324-3] Rapid homoepitaxial growth of (011) β-Ga₂O₃ by HCl-based halide vapor phase epitaxy

〇Yuichi Oshima¹, Takayoshi Oshima¹ (1.NIMS)

Keywords:

Gallium oxide,HVPE