Presentation Information
[16p-W9_324-6]Epitaxial Growth of Gallium Oxide (3):Homoepitaxial Growth of β-Ga2O3 on Sn-doped Ga2O3 Substrates Using a Novel High-Density Oxygen Radical Source (HD-ORS) for PVD
〇Tomoki Takeda2, Naofumi Kato2, Arun Kumar Dhasiyan1, Naohiro Shimizu1, Osamu Oda1,2, Masaru Hori1 (1.Nagoya Univ., CLPS, 2.NU-Rei, Inc.)
Keywords:
gallium oxide,homoepitaxial growth,oxygen radical source
β-Ga2O3 has attracted significant interest for power electronics due to its advantages over Si, SiC and GaN. Among the available techniques, MBE offers atomic-level precision and excellent interface control, but its growth rate is limited by two-step kinetics. At low temperatures, restricted adatom mobility drives growth along the high-index (40-1) plane, which provides abundant reactive sites and thus becomes the preferred growth surface. To overcome the growth rate limitation associated with volatile Ga2O formation, a more efficient oxygen plasma source is essential. High-density oxygen radicals can further oxidize Ga2O to solid β-Ga2O3. Motivated by this, we developed a High-Density Oxygen Radical Source (HD-ORS) that uses an O3-O2 mixture to generate atomic oxygen for PVD. Ozone was chosen compared to oxygen because it dissociates more easily and produces highly reactive singlet oxygen (¹D). Using both a conventional LIA-ICP source and the HD-ORS, we demonstrate homoepitaxial growth of β-Ga2O3 by Physical Vapor Deposition (PVD).