[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[16p-W9_324-7] Epitaxial Growth of Gallium Oxide (4):Wet-Etching and Langmuir Adsorption for Preventing the Oxidations of Si substrates Prior to Epitaxial Growth

〇Osamu Oda^1,2, Arun Kumar Dhasiyan¹, Tomoki Takeda², Naofumi Kato², Naohiro Shimizu¹, Masaru Hori¹ (1.Nagoya Univ., cLPS, 2.NU-Rei, Inc.)

Keywords:

gallium oxide,surface preparation,Langmuir adsorption

Si substrates are widely used for epitaxial growth and device fabrication, particularly for integrating compound semiconductors such as nitrides, oxides, and high-k dielectrics. A major obstacle to high-quality epitaxy is the presence of native SiO_x, which hinders uniform nucleation and degrades device performance. We developed a surface preparation method by RCA-based chemical etching to remove SiO_x. However, the Si surface readily re-oxidizes during temperature raising and oxygen exposure required for plasma ignition. To prevent this, a Ga adsorbed layer is introduced via Langmuir adsorption, acting as a protective barrier. This method effectively suppresses Si oxidation during temperature raising, demonstrating broad applicability for Si-based epitaxial processes.