[16p-W9_324-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-W9_324-9] Epitaxial Growth of Gallium Oxide (6):Consideration of NiO diffusion layers for the creation of p-type Ga-based semiconductors

〇Naohiro Shimizu¹, Arun Kumar Dhasiyan¹, Osamu Oda^1,2, Ikarashi Nobuyuki¹, Masaru Hori¹ (1.Nagoya Univ., 2.NU-Rei, Inc.)

Keywords:

gallium oxide

The new method for forming localized or planar pn junctions in Ga₂O₃ and GaN substrates were applied to diodes. The excellent conductivity characteristics were obtained for both substrates. This method involves implanting Ni ions into the n-type substrate, followed by the two-step annealing process consisting of oxygen plasma treatment and thermal oxidation diffusion treatment in order to form the Ni-O doped diffusion layer and its graded pn junction in the substrates.