[16p-WL2_101-1~11] 6.4 Thin films and New materials

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-WL2_101-2] Thickness dependence of electrical transport in Zintl-phase EuGe₂ films

〇Makoto Ushio¹, Tsukasa Terada², Atsushi Tsukazaki¹ (1.Dept. Appl. Phys. The Univ. of Tokyo, 2.Grad. School of Eng. Sc. The Univ. of Osaka)

Keywords:

Zintl phase,Metal-insulator transition,Thin film

The Zintl-phase compound EuGe₂ is known to be metallic in bulk; however, its electrical transport properties have not been reported in detail. In this study, EuGe₂ films with thicknesses ranging from 8 to 100 nm were grown by molecular beam epitaxy. A metal-insulator transition was confirmed and a characteristic thickness-dependent metal-insulator transition, where systematic insulating behavior emerges from 15 nm was observed.