[16p-WL2_101-1~11] 6.4 Thin films and New materials

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-WL2_101-9] Reaction in ε-Ga₂O₃ Formation by ALD processes with a Dialkylamido-Based Precursor

〇(B)Shodai Shinkai¹, Sho Nakosai¹, Ichiro Hayamizu¹, Tomoki Otani², Hideaki Machida³, Atsushi Ogura², Yoshio Ohshita¹, Toshinori Numata¹ (1.Toyota Tech. Inst., 2.Meiji univ., 3.Gas-Phase Growth)

Keywords:

ALD,Ga2O3,Quantum chemical calculation

Ga₂O₃ exhibits polymorphism, and the metastable ε-phase has been reported to exhibit ferroelectric properties. The growth of metastable-phase films depends heavily on precise control of the growth process, including lattice matching with the substrate, control of impurities and stress, and temperature optimization. Tris(dimethylamido)gallium (TDMAG), an amide-based precursor, is expected to enhance safety and reduce carbon contamination. In this presentation, we report on the reaction mechanism of TDMAG.