[17a-M_103-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[17a-M_103-10] Ion Shielding Structure in Radical Etching System with Magnetic Field

〇Yuji Inoue¹, Taku Iwase¹, Yusuke Nakatani², Yasushi Sonoda² (1.Hitachi, Ltd. R&D Group, 2.Hitachi High-Tech Corp)

Keywords:

dry etching,RAXIO,radical ething

To address the processing of increasingly three-dimensional semiconductor devices, we investigated the ion shielding structure with a magnetic field-assisted radical etching apparatus. Using a dry etching apparatus, we evaluated the effects of ion shield plate structure and magnetic field distribution on ion shielding performance under a static magnetic field. Ion current density measurements during plasma generation revealed that increasing the angle between the magnetic field lines and the aperture enhances ion shielding performance. Furthermore, combining a static magnetic field with an angled hole design achieves high ion shielding performance.